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| PTB32005X NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PTB32005X is Designed for Common Base General purpose amplifier Applications up to 4.2 GHz. PACKAGE STYLE .250 2L FLG A OD C E .060 x 45 CHAMFER FEATURES INCLUDE: * Diffused Emitter Ballasting Resistor * Hermetic Flange Package * Gold Metelization B G L H J F I K M NP MAXIMUM RATINGS IC VCBO PDISS TJ TSTG JC 750 mA 40 V 8.7 W @ TC = 75 C -65 C to +200 C -65 C to +200 C 10.5 C/W DIM A B C D E F G H I J K L M N P MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 / 2.97 .560 / 14.22 .790 / 20.07 .225 / 5.72 .165 / 4.19 .003 / 0.08 .058 / 1.47 .119 / 3.02 .149 / 3.78 .032 / 0.81 .255 / 6.48 .132 / 3.35 .117 / 2.97 .570 / 14.48 .810 / 20.57 .235 / 5.97 .185 / 4.70 .007 / 0.18 .068 / 1.73 .135 / 3.43 .187 / 4.75 CHARACTERISTICS SYMBOL BVCBO BVCES ICBO IEBO Ccb Cce POUT C GP TC = 25 C TEST CONDITIONS IC = 3.0 mA IC = 10 mA VCE = 24 V VEB = 1.5 V VCB = 24 V VCB = 24 V VEB = 1.5 V VEB = 1.5 V f = 1.0 MHz f = 1.0 MHz MINIMUM TYPICAL MAXIMUM 40 40 30 0.6 3.8 0.9 4.5 35 8.0 UNITS V V A A pF pF W % dB VCC = 24 V f = 3.0 GHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1 |
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